parameter symbol irf7811wpbf units drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain or source t a = 25c i d 14 current (v gs 4.5v) t l = 90c 13 a pulsed drain current i dm 109 power dissipation t a = 25c p d 3.1 w t l = 90c 3.0 junction & storage temperature range t j , t stg ?55 to 150 c continuous source current (body diode) i s 3.8 a pulsed source current i sm 109 absolute maximum ratings parameter max. units maximum junction-to-ambient r ja 40 c/w maximum junction-to-lead r jl 20 c/w thermal resistance irf7811wpbf 01/06/09 irf7811wpbf r ds (on) 9.0m ? q g 22nc q sw 10.1nc q oss 12nc device characteristics top view 8 1 2 3 4 5 6 7 d d d d g s a s s so-8 hexfet ? power mosfet for dc-dc converters ? n-channel application-specific mosfets ? ideal for cpu core dc-dc converters ? low conduction losses ? low switching losses ? 100% tested for rg ? lead-free description this new device employs advanced hexfet power mosfet technology to achieve an unprecedented balance of on-resistance and gate charge. the reduced conduction and switching losses make it ideal for high efficiency dc-dc converters that power the latest generation of microprocessors. the irf7811wpbf has been optimized for all parameters that are critical in synchronous buck converters including r ds(on) , gate charge and cdv/dt-induced turn-on immunity. the irf7811wpbf offers particulary low r ds(on) and high cdv/dt immunity for synchronous fet applications. the package is designed for vapor phase, infra-red, convection, or wave soldering techniques. power dissipation of greater than 3w is possible in a typical pcb mount application. www.irf.com 1 pd- 95023c
irf7811wpbf www.irf.com 2 parameter min typ max units conditions diode forward v sd 1.25 v i s = 15a , v gs = 0v voltage* reverse recovery q rr 45 nc di/dt ~ 700a/s v ds = 16v, v gs = 0v, i s = 15a reverse recovery q rr(s) 41 nc di/dt = 700a/s charge (with parallel (with 10bq040) schottky) v ds = 16v, v gs = 0v, i s = 15a source-drain rating & characteristics charge notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board typ = measured - q oss typical values of r ds (on) measured at v gs = 4.5v, q g , q sw and q oss measured at v gs = 5.0v, i f = 15a. parameter min ty p max units conditions drain-to-source bv dss 30 ? ? v v gs = 0v, i d = 250a breakdown voltage static drain-source r ds (on) 9.0 12 m ? v gs = 4.5v, i d = 15a on resistance gate threshold voltage v gs(th) 1.0 v v ds = v gs ,i d = 250a drain-source leakage i dss 30 v ds = 24v, v gs = 0 current* 150 a v ds = 24v, v gs = 0, tj = 100c gate-source leakage i gss 100 na v gs = 12v current total gate chg cont fet q g 22 33 v gs =5.0v, i d =15a, v ds =16v total gate chg sync fet q g 16.3 v gs = 5v, v ds < 100mv pre-vth q gs1 3.5 v ds = 16v, i d = 15a, v gs = 5.0v gate-source charge post-vth q gs2 1.2 nc gate-source charge gate to drain charge q gd 8.8 switch chg(q gs2 + q gd ) q sw 10.1 output charge q oss 12 v ds = 16v, v gs = 0 gate resistance r g 2.0 4.0 ? turn-on delay time t d (on) 11 v dd = 16v, i d = 15a rise time t r 11 ns v gs = 5.0v turn-off delay time t d (off) 29 clamped inductive load fall time t f 9.9 input capacitance c iss ? 2335 ? output capacitance c oss ? 400 ? pf v ds = 16v, v gs = 0 reverse transfer capacitance c rss ? 119 ? electrical characteristics current
irf7811wpbf www.irf.com 3 fig 1. normalized on-resistance vs. temperature fig 2. typical gate charge vs. gate-to-source voltage fig 3. on-resistance vs. gate voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 15a 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs, gate -to -source voltage (v) 0.005 0.010 0.015 0.020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 15a fig 4. typical capacitance vs. drain-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 4 8 12 16 20 24 q g, total gate charge (nc) 0.0 2.0 4.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) i d = 15a v ds = 16v
irf7811wpbf www.irf.com 4 figure 7. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 6. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 5. typical transfer characteristics 0.1 1 10 100 2.5 3.0 3.5 4.0 4.5 5.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irf7811wpbf www.irf.com 5 so-8 package outline (mosfet & fetky)
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dimensions are shown in milimeters (inches) so-8 part marking information
note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
irf7811wpbf www.irf.com 6 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/2009 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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